取扱製品




●φ2”〜φ6”ウェハー
●φ2”〜φ6”インゴット

角ウェハーや特殊形状など
ご相談下さい。






■Silicon Carbide Substrate Standard Specification

6inch 4H-SiC Substrate Specification
Grade Production Grade Research Grade Dummy Grade
Diameter 150mm±0.50mm
Thickness 350.0μm±25.0μm  500.0μm±25.0μm
Face Orientation Off axis:4.0°toward〈1120 〉±0.5°for 4H-N On axis:〈0001〉±0.5°for 6H-SI/4H-SI
Primary Flat Orientation {10-10}±5.0°
Primary Flat Length 47.5mm±2.5mm
Edge excusion 3mm
Micropipe Density ≦5cm-2 ≦15cm-2 ≦50cm-2
Resistivity 4H-N 0.015〜0.028Ω・cm
4/6-SI ≧1E5Ω・cm
TTV/Bow/Warp ≦15μm/≦40μm/≦60μm
Roughness CMP Ra≦0.5nm / Polish Ra≦1nm
Cracks by high intensity light None 1 allowed ≦2mm Cumulative length ≦10mm,
single length ≦2mm
Hex Plates by high intensity light Cumulative are ≦1% Cumulative are ≦2% Cumulative are ≦5%
Polytype areas by high intesity light None Cumulative are ≦2% Cumulative are ≦5%
Scratches by high intensity light 3scratches to 1×wafer
diameter cumulative length
5scratches to 1×wafer
diameter cumulative length
5scratches to 1×wafer
diameter cumulative length
Edge chip None 3allowed,≦0.5mm each 5allowed,≦1mm each
Contamination by high intensity light None

<Notes>
・Defects limits apply to entire wafer surface except for the edge exclusion arae.
・Defects shall be existed the edge area, only defect beyond of the prescribed scope could be considered as reject cause.
& the scratclhes should be checked on Si face only.



4inch 4H-SiC Substrate Specification
Grade Production Grade Research Grade Dummy Grade
Diameter 100mm±0.50mm
Thickness 500.0μm±40.0μm ※1
Face Orientation On axis:〈0001〉±0.2°Off   axis:1.0/4.0/8.0toward〈11-20〉±0.5°
Primary Flat Orientation 〈11-20〉+0.5°
Primary Flat Length 32.50mm±2.0mm
Secondary Flat Orientation 90°CW from orientation flat ±0.5°
Secondary Flat Length 18.0mm±2.0mm
Micropipe Density ≦5cm-2 ≦10cm-2 ≦30cm-2
FWHM ≦60arcsec ≦60arcsec ≦100arcsec
Resistivity Semi-insulating >105Ω・cm >105Ω・cm ※2
N-Type 0.01Ω・cm〜0.03Ω・cm 0.01Ω・cm〜0.2Ω・cm ※2
TTV/Bow/Warp ≦10μm/≦20μm/≦30μm ≦10μm/≦25μm/≦40μm ≦20μm/≦30μm/≦45μm
Roughness CMP Ra≦0.2nm CMP Ra≦0.2nm CMP Ra≦0.3nm
Surface Finish C面:Optical Polish /Si 面:CMP ※3
Usable area ≧90% ≧90% ≧75%

※1. 規格外の厚みについてもご相談下さい。
※2. 有効面積は70%程度です。
※3. ご希望の面仕上げがございましたらご相談下さい。


3inch 4H-SiC Substrate Specification
Grade Production Grade Research Grade Dummy Grade
Diameter 76.2mm±0.40mm
Thickness 400.0μm±40.0μm ※1
Face Orientation On axis:〈0001〉±0.2°Off   axis:1.0/4.0/8.0toward〈11-20〉±0.5°
Primary Flat Orientation 〈11-20〉+0.5°
Primary Flat Length 22.20mm±3.20mm
Secondary Flat Orientation 90°CW from orientation flat ±0.5°
Secondary Flat Length 11.2mm±1.60mm
Micropipe Density ≦5cm-2 ≦10cm-2 ≦30cm-2
FWHM ≦60arcsec ≦60arcsec ≦100arcsec
Resistivity Semi-insulating >105Ω・cm >105Ω・cm ※2
N-Type 0.01Ω・cm〜0.03Ω・cm 0.01Ω・cm〜0.2Ω・cm ※2
TTV/Bow/Warp ≦10μm/≦10μm/≦15μm ≦10μm/≦15μm/≦20μm ≦20μm/≦20μm/≦35μm
Roughness CMP Ra≦0.2nm CMP Ra≦0.2nm CMP Ra≦0.3nm
Surface Finish C面:Optical Polish /Si 面:CMP ※3
Usable area ≧90% ≧90% ≧75%

※1. 規格外の厚みについてもご相談下さい。
※2. 有効面積は70%程度です。
※3. ご希望の面仕上げがございましたらご相談下さい。


2inch 4H-SiC Substrate Specification
Grade Production Grade Research Grade Dummy Grade
Diameter 50.8mm±0.20mm
Thickness 350.0μm±25.0μm ※1
Face Orientation On axis:〈0001〉±0.2°Off   axis:1.0/4.0/8.0toward〈11-20〉±0.5°
Primary Flat Orientation 〈11-20〉+0.5°
Primary Flat Length 15.88mm±1.65mm
Secondary Flat Orientation 90°CW from orientation flat ±0.5°
Secondary Flat Length 8.0mm±1.65mm
Micropipe Density ≦5cm-2 ≦10cm-2 ≦30cm-2
FWHM ≦60arcsec ≦60arcsec ≦100arcsec
Resistivity Semi-insulating >105Ω・cm >105Ω・cm ※2
N-Type 0.01Ω・cm〜0.03Ω・cm 0.01Ω・cm〜0.1Ω・cm ※2
TTV/Bow/Warp ≦10μm/≦10μm/≦15μm ≦10μm/≦15μm/≦25μm ≦20μm/≦20μm/≦35μm
Roughness CMP Ra≦0.4nm CMP Ra≦0.4nm CMP Ra≦0.4nm
Surface Finish C面:Optical Polish /Si 面:CMP ※3
Usable area ≧90% ≧90% ≧80%

※1. 規格外の厚みについてもご相談下さい。
※2. 有効面積は70%程度です。
※3. ご希望の面仕上げがございましたらご相談下さい。

※各素材の数値は基本スペックです。その他スペックについては、気軽にお問合せください。


Copyright(C)TECOM co.,LTD All Rights Reserved